TRANSIENT BEHAVIOUR OF A RANGE OF P+-N-N+ DIODES WITH NARROW CENTRE REGIONS

被引：6

|

作者：

VARSHNEY, RC

ROULSTON, DJ

机构：

来源：

SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 07期

关键词：

D O I：

10.1016/0038-1101(70)90105-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1081 / &

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