THEORY OF THE FLOW OF ELECTRONS AND HOLES IN GERMANIUM AND OTHER SEMICONDUCTORS

被引:436
作者
VANROOSBROECK, W
机构
来源
BELL SYSTEM TECHNICAL JOURNAL | 1950年 / 29卷 / 04期
关键词
D O I
10.1002/j.1538-7305.1950.tb03653.x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:560 / 607
页数:48
相关论文
共 29 条
[21]   THE DOUBLE-SURFACE TRANSISTOR [J].
SHIVE, JN .
PHYSICAL REVIEW, 1949, 75 (04) :689-690
[22]   HOLE INJECTION IN GERMANIUM QUANTITATIVE STUDIES AND FILAMENTARY TRANSISTORS [J].
SHOCKLEY, W ;
PEARSON, GL ;
HAYNES, JR .
BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :344-366
[23]   THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J].
SHOCKLEY, W .
BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489
[24]  
SHOCKLEY W, 1949, PHYS REV, V76, P180
[25]  
SHOCKLEY W, 1949, PHYS REV, V76, P459
[26]   CONCENTRATING HOLES AND ELECTRONS BY MAGNETIC FIELDS [J].
SUHL, H ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1949, 75 (10) :1617-1618
[27]  
SUHL H, 1949, PHYS REV, V76, P180
[28]  
TAYLOR WE, 1950, 1950 ANN M AM PHYS S
[29]  
Torrey H.C., 1948, CRYSTAL RECTIFIERS