The electrical resistivity ρ(T) of RF sputter-deposited Nb3Ge films has been investigated in detail in the neighborhood of the transition temperature. After cooling to below room temperature, many samples exhibited a semiconductive type of increase in the resistivity before undergoing the transition to superconductivity. These films have very large resistivity in the normal state (ρn=103-105 μΩ cm) and show fairly high onset temperatures. The maximum value of the onset temperature Tc-on reaches 32 K. On the other hand, the films with rather small resistivity exhibited a metallic behavior in the normal state.