GROWTH OF SELECTIVE TUNGSTEN ON SELF-ALIGNED TI AND PTNI SILICIDES BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION

被引：22

作者：

BROADBENT, EK ^{[1
]}

MORGAN, AE ^{[1
]}

DEBLASI, JM ^{[1
]}

VANDERPUTTE, P ^{[1
]}

COULMAN, B ^{[1
]}

BURROW, BJ ^{[1
]}

SADANA, DK ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 08期

关键词：

D O I：

10.1149/1.2109001

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1715 / 1721

页数：7

共 21 条

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[6] FORMATION OF TIN/TISI2/P+-SI/N-SI BY RAPID THERMAL ANNEALING (RTA) SILICON IMPLANTED WITH BORON THROUGH TITANIUM [J].

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BROADBENT, EK ;

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NORCOTT, MH .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (11) :591-593

[7] BORON ION-IMPLANTATION IN SILICON THROUGH SELECTIVELY DEPOSITED TUNGSTEN FILMS [J].

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