EFFECT OF DIFFUSION ON SMALL-SIGNAL STABILITY OF SEMICONDUCTOR PLATES WITH NEGATIVE AC MOBILITY

被引：0

作者：

ENGELMANN, RW ^{[1
]}

HEINLE, W ^{[1
]}

机构：

[1] AEG TELEFUNKEN, FORSCH INST, ELISABETHEN STR 3, D-79 ULM, WEST GERMANY

来源：

ARCHIV FUR ELEKTRONIK UND UBERTRAGUNGSTECHNIK | 1974年 / 28卷 / 02期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：66 / 70

页数：5

共 23 条

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MATARESE, RJ .

PROCEEDINGS OF THE IEEE, 1972, 60 (12) :1486-1502

[2] TRAVELLING-WAVE AMPLIFIER USING THIN EPITAXIAL GAAS LAYER [J].

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TRIANO, A .

ELECTRONICS LETTERS, 1970, 6 (24) :775-+

[3]

DEAN RH, 1972, T I ELECT ELECTRON E, VED19, P1144

[4]

DEAN RH, 1972, T I ELECT ELECTRON E, VED19, P1148

[5]

ENGELMANN RW, 1972, AEU-ARCH ELEKTRON UB, V26, P357

[6]

ENGELMANN RW, 1971, AEU-ARCH ELEKTRON UB, V25, P357

[7]

ENGELMANN RWH, 1971, T I ELECT ELECTRON E, VED18, P587

[8] CALCULATION OF HOT ELECTRON DIFFUSION RATE FOR GAAS [J].

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REES, HD .

PHYSICS LETTERS A, 1969, A 29 (10) :578-&

[9]

FREY W, 1973, AEU-ARCH ELEKTRON UB, V27, P245

[10] STABILITY-CRITERION FOR SEMICONDUCTOR PLATES WITH NEGATIVE AC MOBILITY [J].

HEINLE, W ;

ENGELMAN.RW .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (07) :914-&

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