DIRECTIONAL REACTIVE ION ETCHING AT OBLIQUE ANGLES

被引：78
作者：
BOYD, GD
COLDREN, LA
STORZ, FG
机构：
来源：
APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 07期
关键词：
D O I：
10.1063/1.91554
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：583 / 585
页数：3
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[4]   PREFERENTIAL SIO2 ETCHING ON SI SUBSTRATE BY PLASMA REACTIVE SPUTTER ETCHING [J].
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