GSMBE GROWN (GAIN)P/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS EXHIBITING CURRENT GAINS UP TO 590

被引：3
作者：
LU, SS
HUANG, CC
机构：
[1] Department of Electrical Engineering, National Taiwan University, Taipei
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 04期
关键词：
BIPOLAR DEVICES; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;
D O I：
10.1049/el:19920250
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The first lattice-matched Ga0.51In0.49P/GaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy is reported. Small signal current gains exceeding 590 and small offset voltages (approximately 120 meV) were obtained. These results demonstrate that (GaIn)P is a good alternative to the (AlGa)As in GaAs-based devices.
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收藏
页码：398 / 400
页数：3
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