THEORY OF GENERATION-RECOMBINATION NOISE IN CHANNEL OF JUNCTION FIELD-EFFECT TRANSISTORS

被引：9
|
作者：
VANVLIET, KM [1 ]
HIATT, CF [1 ]
机构：
[1] UNIV FLORIDA, DEPT ELECT ENGN, GAINESVILLE, FL 32611 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / 22卷 / 08期
关键词：
D O I：
10.1109/T-ED.1975.18188
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：616 / 617
页数：2
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