ORIGIN OF REVERSE ANNEALING IN RADIATION-DAMAGED SILICON SOLAR-CELLS

被引：16
作者：
WEINBERG, I
SWARTZ, CK
机构：
来源：
APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 08期
关键词：
D O I：
10.1063/1.91595
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：693 / 695
页数：3
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共 11 条
[1]  
BUHS R, 1975, 11TH C REC PHOT SPEC
[2]   TEMPERATURE DEPENDENCE OF RADIATION DAMAGE IN SILICON [J].
FANG, PH ;
LIU, YM .
PHYSICS LETTERS, 1966, 20 (04) :344-&
[3]  
FANG PH, 1965, TMX55399 NASA REP
[4]   SOLAR POWER FROM SATELLITES [J].
GLASER, PE .
PHYSICS TODAY, 1977, 30 (02) :30-&
[5]  
GOLDHAMMER LJ, 1979, CR159949 NASA REP
[6]   ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].
HALL, RN .
PHYSICAL REVIEW, 1952, 87 (02) :387-387
[7]   EPR OF A CARBON-OXYGEN-DIVACANCY COMPLEX IN IRRADIATED SILICON [J].
LEE, YH ;
CORBETT, JW ;
BROWER, KL .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1977, 41 (02) :637-647
[8]   DEFECT ENERGY-LEVELS IN BORON-DOPED SILICON IRRADIATED WITH 1-MEV ELECTRONS [J].
MOONEY, PM ;
CHENG, LJ ;
SULI, M ;
GERSON, JD ;
CORBETT, JW .
PHYSICAL REVIEW B, 1977, 15 (08) :3836-3843
[9]  
ROSENZWEIG W, 1962, BELL SYST TECH J, V41, P1573
[10]   STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].
SHOCKLEY, W ;
READ, WT .
PHYSICAL REVIEW, 1952, 87 (05) :835-842
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