PHOTOCONDUCTIVITY OF YTTRIUM IRON-GARNET SINGLE CRYSTAL-BULK AND FILM

被引：5

作者：

SURYANARAYANAN, R

KRISHNAN, R

机构：

[1] CNRS, LAB PHYS SOLIDES, MEUDON, FRANCE

[2] CNRS, LAB MAGNETISME, BELLEVUE, FRANCE

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1974年 / 22卷 / 02期

关键词：

D O I：

10.1002/pssa.2210220260

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K177 / K180

页数：4

共 50 条

[1] DOMAIN-STRUCTURE OF AN YTTRIUM IRON-GARNET SINGLE-CRYSTAL
VLASKOVLASOV, VK
DEDUKH, LM
NIKITENKO, VI
ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1976, 71 (12): : 2291 - 2304
[2] MAGNETORESISTANCE IN YTTRIUM IRON-GARNET
LECRAW, RC
GYORGY, EM
WOLFE, R
BONNER, WA
BLANK, SL
GRODKIEWICZ, WH
APPLIED PHYSICS LETTERS, 1978, 33 (05) : 379 - 380
[3] MAGNETOEXCHANGE BRANCH REPULSION IN THIN SINGLE-CRYSTAL DISKS OF YTTRIUM IRON-GARNET
HENRY, R
WIGEN, PE
BROWN, SD
BESSER, PJ
PHYSICAL REVIEW LETTERS, 1972, 28 (19) : 1272 - &
[4] LEAD SUBSTITUTION IN YTTRIUM IRON-GARNET
POPMA, TJA
VANDIEPE.AM
ROBERTSO.JM
MATERIALS RESEARCH BULLETIN, 1974, 9 (05) : 699 - 704
[5] YTTRIUM IRON-GARNET ACOUSTIC RESONATORS
NASONOV, VS
TELEGINA, TP
SOVIET PHYSICS ACOUSTICS-USSR, 1973, 19 (01): : 78 - 79
[6] BARKHAUSEN EFFECT IN YTTRIUM IRON-GARNET SINGLE-CRYSTALS
RODE, B
BECK, A
DEIMEL, P
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1977, 6 (AUG-) : 252 - 255
[7] ANNEALING EFFECTS ON CATION DISTRIBUTION IN DIAMAGNETICALLY SUBSTITUTED SINGLE-CRYSTAL YTTRIUM IRON-GARNET
ROSCHMANN, P
TOLKSDORF, W
WELZ, F
IEEE TRANSACTIONS ON MAGNETICS, 1978, 14 (05) : 704 - 706
[8] PINNING EFFECTS ON MAGNETOSTATIC MODES OF A THICK YTTRIUM IRON-GARNET FILM
DEGASPERIS, P
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1978, 43 (01): : 41 - 56
[9] GROWTH OF THICK SINGLE-CRYSTAL LAYERS OF YTTRIUM IRON-GARNET BY LIQUID-PHASE EPITAXY
GLASS, HL
JOURNAL OF CRYSTAL GROWTH, 1976, 33 (01) : 183 - 184
[10] Features of photoinduced magnetism in some yttrium–iron-garnet single crystals
N. V. Vorob’eva
V. B. Mityukhlyaev
Semiconductors, 2016, 50 : 449 - 452

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