HALL EFFECT STUDIES OF DOPED ZINC OXIDE SINGLE CRYSTALS

被引:338
作者
HUTSON, AR
机构
来源
PHYSICAL REVIEW | 1957年 / 108卷 / 02期
关键词
D O I
10.1103/PhysRev.108.222
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:222 / 230
页数:9
相关论文
共 33 条
[1]  
Baumbach H. H., 1933, Z PHYSIK CHEM B, V22, P199
[2]  
BEVAN, 1948, J CHEM SOC, P1729
[3]  
BROOKS H, 1955, ADV ELECTRON, V7, P106
[4]  
Fritsch O, 1935, ANN PHYS-BERLIN, V22, P375
[5]   The mean free path of electrons in polar crystals [J].
Frohlich, H ;
Mott, NF .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1939, 171 (A947) :0496-0504
[6]  
Glemser O, 1939, Z ELKTROCHEM ANGEW P, V45, P865
[7]   SOME ELECTRICAL PROPERTIES OF ZINC OXIDE SEMICONDUCTOR [J].
HAHN, EE .
JOURNAL OF APPLIED PHYSICS, 1951, 22 (07) :855-863
[8]   CONDUCTIVITY AND HALL EFFECT OF ZNO AT LOW TEMPERATURES [J].
HARRISON, SE .
PHYSICAL REVIEW, 1954, 93 (01) :52-62
[9]   THEORY OF THE THERMOELECTRIC POWER OF SEMICONDUCTORS [J].
HERRING, C .
PHYSICAL REVIEW, 1954, 96 (05) :1163-1187
[10]   TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR [J].
HERRING, C .
BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02) :237-290