PIEZORESISTANCE AND CONDUCTION-BAND MINIMA OF GAAS

被引：43

作者：

ASPNES, DE ^{[1
]}

CARDONA, M ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH, D-7000 STUTTGART 80, FED REP GER

来源：

PHYSICAL REVIEW B | 1978年 / 17卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.17.741

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：741 / 751

页数：11

共 75 条

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ASPNES, DE .

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ASPNES, DE ;

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[4] ORDERING AND ABSOLUTE ENERGIES OF L6C AND X6C CONDUCTION-BAND MINIMA IN GAAS [J].

ASPNES, DE ;

OLSON, CG ;

LYNCH, DW .

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[5] LINE-SHAPE AND SYMMETRY ANALYSIS OF CORE-LEVEL ELECTROREFLECTANCE SPECTRA OF GAP [J].

ASPNES, DE ;

OLSON, CG ;

LYNCH, DW .

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[6]

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[7]

ASPNES DE, 1976, 13TH P INT C PHYS SE, P1000

[8] SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS [J].

ASPNNES, DE ;

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PHYSICAL REVIEW B, 1973, 7 (10) :4605-4652

[9] INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM [J].

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[10] OPTICAL ABSORPTION DUE TO INTER-CONDUCTION-MINIMUM TRANSITIONS IN GALLIUM ARSENIDE [J].

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