IMPROVEMENT OF TWO-DIMENSIONAL ELECTRON-GAS CONCENTRATION IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES BY ATOMIC PLANAR DOPING

被引：15
作者：
ISHIKAWA, T
OGASAWARA, K
NAKAMURA, T
KURODA, S
KONDO, K
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 05期
关键词：
D O I：
10.1063/1.338041
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1937 / 1940
页数：4
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