STUDY OF ELECTRON-CAPTURE COEFFICIENT OF SUBSTITUTIONAL NEUTRAL BORON ATOMS IN SILICON AT LOW-TEMPERATURES .2. THEORETICAL STUDY

被引：0
|
作者：
HECKMANN, M [1 ]
BARRAU, J [1 ]
PUGNET, M [1 ]
BROUSSEA.M [1 ]
机构：
[1] CNRS,INST NAT SCI APPL,LAB PHYS SOLIDES,TOULOUSE,FRANCE
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 20卷 / 01期
关键词：
D O I：
10.1002/pssa.2210200117
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：183 / 193
页数：11
相关论文
共 50 条
  • [1] STUDY OF ELECTRON-CAPTURE COEFFICIENT OF SUBSTITUTIONAL NEUTRAL BORON ATOMS IN SILICON AT LOW-TEMPERATURES .1. EXPERIMENTAL STUDY
    HECKMANN, M
    BARRAU, J
    PUGNET, M
    BROUSSEAU, M
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 19 (02): : 397 - 403
  • [2] MONTE-CARLO STUDY OF THE STATISTICS OF ELECTRON-CAPTURE BY SHALLOW DONORS IN SILICON AT LOW-TEMPERATURES
    PALMA, A
    JIMENEZTEJADA, JA
    GODOY, A
    LOPEZVILLANUEVA, JA
    CARCELLER, JE
    PHYSICAL REVIEW B, 1995, 51 (20): : 14147 - 14151
  • [3] ELECTRON-CAPTURE COEFFICIENT OF NEUTRAL INDIUM IN SILICON
    SUNDSTROM, BO
    HULDT, L
    NILSSON, NG
    SOLID STATE COMMUNICATIONS, 1975, 17 (07) : 787 - 790
  • [4] HOLE TRAPPING BY BORON ATOMS IN SILICON AT LOW-TEMPERATURES
    GODIK, EE
    KURITSYN, YA
    SINIS, VP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (01): : 51 - 53
  • [5] CAPTURE OF HOLES BY NEGATIVELY CHARGED BORON ATOMS IN DOPED WEAKLY COMPENSATED SILICON AT LOW-TEMPERATURES
    RYLKOV, VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (09): : 1048 - 1051
  • [6] ELECTRON-CAPTURE COEFFICIENT OF NEUTRAL INDIUM AND PAIR RECOMBINATION IN COMPENSATED SILICON
    SUNDSTROM, BO
    HULDT, L
    NILSSON, NG
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (15): : 3359 - 3370
  • [7] ELECTRON AND HOLE-CAPTURE COEFFICIENT OF INDIUM IN SILICON AT LOW TEMPERATURES
    PREIER, H
    JOURNAL OF APPLIED PHYSICS, 1968, 39 (01) : 194 - &
  • [8] ELECTRON-CAPTURE COLLISIONS AT KEV ENERGIES OF BORON AND OTHER MULTIPLY CHARGED IONS WITH ATOMS AND MOLECULES .2. ATOMIC-HYDROGEN
    GARDNER, LD
    BAYFIELD, JE
    KOCH, PM
    SELLIN, IA
    PEGG, DJ
    PETERSON, RS
    CRANDALL, DH
    PHYSICAL REVIEW A, 1980, 21 (05) : 1397 - 1402
  • [9] WARM ELECTRON COEFFICIENT OF TWO-DIMENSIONAL ELECTRON-GAS IN SILICON INVERSION LAYER AT LOW-TEMPERATURES
    BASU, PK
    ROY, JB
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1984, 121 (02): : 743 - 748
  • [10] THEORETICAL-STUDY OF RADIATIVE ELECTRON-CAPTURE IN ION-ATOM COLLISIONS
    WATANABE, T
    HINO, K
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 42 (04): : 494 - 499
12345