RECRYSTALLIZATION OF STRAINED GEXSI1-X SI LAYERS WITH VARIOUS GE GRADIENTS AND IN THE PRESENCE OF IMPURITIES

被引：1

作者：

CORNI, F

TONINI, R

BALBONI, R

VESCAN, L

机构：

[1] CNR, IST LAMEL, BOLOGNA, ITALY

[2] FORSCHUNGSZENTRUM JULICH, FORSCHUNGSZENTRUM, INST SCHICHT & IONENTECH, JULICH, GERMANY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 28卷 / 1-3期

关键词：

CRYSTALLIZATION; INTERFACE ROUGHNESS; STRAINED GEXSI1-X; EPITAXY OF THIN FILMS;

D O I：

10.1016/0921-5107(94)90005-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The recrystallization of amorphous GexSi1-x thin films on Si with uniform and with increasing Ge content is studied. The amorphous-crystal interface roughness is modified by the presence of C and O impurities before entering the GexSi1-x layer. The crystallization kinetics are heavily affected by the resulting interface morphology. A minimum velocity is found in the region of the impurities where the interface starts to roughen; the strain effect induced by the Ge within the GexSi1-x is overcome and the crystallization proceeds according to kinetics very similar to those for pure Si.

引用

页码：9 / 13

页数：5

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