HETEROEPITAXIAL GROWTH OF BORON MONOPHOSPHIDE ON SILICON SUBSTRATE USING B2H6-PH3-H2 SYSTEM

被引：43

作者：

TAKIGAWA, M ^{[1
]}

HIRAYAMA, M ^{[1
]}

SHOHNO, K ^{[1
]}

机构：

[1] SOPHIA UNIV,DEPT ELECTR,CHIYODA,TOKYO,JAPAN

来源：

关键词：

D O I：

10.1143/JJAP.13.411

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：411 / 416

页数：6

共 7 条

[1] OPTICAL ABSORPTION ELECTROLUMINESCENCE + BAND GAP OF BP [J].

ARCHER, RJ ;

LOEBNER, EE ;

KOYAMA, RY ;

LUCAS, RC .

[2] CRYSTALS AND EPITAXIAL LAYERS OF BORON PHOSPHIDE [J].

CHU, TL ;

JACKSON, JM ;

HYSLOP, AE ;

CHU, SC .

[3]

KINOSHITA T, 1970, OYO BUTURI, V39, P788

TAKIGAWA, M ;

HIRAYAMA, M ;

SHOHNO, K .

[5]

WANG CC, 1964, RCA REV, V25, P159

[6] THE PREPARATION AND PROPERTIES OF BORON PHOSPHIDES AND ARSENIDES [J].

WILLIAMS, FV ;

RUEHRWEIN, RA .

[7]

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