PARTIAL-ORDERING EFFECTS IN INXGA1-XP

被引：21

作者：

CAPAZ, RB ^{[1
]}

KOILLER, B ^{[1
]}

机构：

[1] PONTIFICIA UNIV CATOLICA,DEPT FIS,BR-22452 RIO JANEIRO,RJ,BRAZIL

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.47.4044

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a theoretical study for the band-gap energy and structural properties of partially ordered InxGa1-xP alloys. Partially ordered alloys axe modeled through a statistical ensemble of small crystal structures defined in a 64-site periodic cell. Configurations axe generated according to the degree of ordering. The dependence of calculated properties on the long-range-order parameter is found to follow simple functional relationships. Structural anisotropies scale accurately with the square of the order parameter.

引用

页码：4044 / 4047

页数：4

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