VAPOR GROWTH AND PROPERTIES OF AIAS

被引：29

作者：

ETTENBERG, M

SIGAI, AG

DREEBEN, A

GILBERT, SL

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 08期

关键词：

D O I：

10.1149/1.2408321

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1355 / +

页数：1

共 15 条

[1] PREPARATION OF ALUMINIUM ARSENIDE BY A VAPOUR PHASE TRANSPORT REACTION [J].

BOLGER, DE ;

BARRY, BE .

NATURE, 1963, 199 (490) :1287-&

[2]

CHOW, 1964, JANAF THERMOCHEMICAL

[3] THERMAL EXPANSION OF ALAS [J].

ETTENBERG, M ;

PAFF, RJ .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) :3926-+

[4] VAPORIZATION OF ALUMINUM ARSENIDE [J].

HOCH, M ;

HINGE, KS .

JOURNAL OF CHEMICAL PHYSICS, 1961, 35 (02) :451-&

[5]

HULTGREN R, 1963, SELECTED VALUES THER

[6]

KIKUCHI T, 1964, T JAPAN I METALS, V122, P5

[7] UBER ALUMINIUMARSENID [J].

KISCHIO, W .

ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1964, 328 (3-4) :187-193

[8] PROPERTIES OF EFFICIENT SILICON-COMPENSATED ALXGA1-XAS ELECTROLUMINESCENT DIODES [J].

KRESSEL, H ;

HAWRYLO, FZ ;

ALMELEH, N .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (05) :2248-&

[9] FUNDAMENTAL ABSORPTION EDGE OF AIAS AND AIP [J].

LORENZ, MR ;

CHICOTKA, R ;

PETTIT, GD ;

DEAN, PJ .

SOLID STATE COMMUNICATIONS, 1970, 8 (09) :693-&

[10]

MANASEVIT HM, 1969, MAY EL SOC M

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