DETECTION OF MONOLAYER QUANTITIES OF OXYGEN ON SILICON USING ENERGY-DISPERSIVE X-RAY SPECTROMETRY

被引:9
作者
MUSKET, RG
STRAUSSER, YE
机构
[1] HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
[2] KEVEX CORP,FOSTER CITY,CA 94404
关键词
D O I
10.1063/1.91737
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:478 / 480
页数:3
相关论文
共 6 条
[1]   X-RAY-FLUORESCENCE YIELDS, AUGER, AND COSTER-KRONIG TRANSITION PROBABILITIES [J].
BAMBYNEK, W ;
SWIFT, CD ;
CRASEMANN, B ;
FREND, HU ;
RAO, PV ;
PRICE, RE ;
MARK, H ;
FINK, RW .
REVIEWS OF MODERN PHYSICS, 1972, 44 (04) :716-+
[2]   SPUTTERING OF AMORPHOUS SILICON FILMS BY 0.5 TO 5-KEV AR+ IONS [J].
KIRSCHNER, J ;
ETZKORN, HW .
APPLIED SURFACE SCIENCE, 1979, 3 (02) :251-271
[3]  
KIRSCHNER J, 1977, 7TH P INT VAC C 3RD, P2213
[4]  
LURIO A, COMMUNICATION
[5]   OXIDE-THICKNESS DETERMINATION BY PROTON-INDUCED X-RAY-FLUORESCENCE [J].
MUSKET, RG ;
BAUER, W .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (11) :4786-&
[6]  
MUSKET RG, 1977, RES DEV, V28, P26