THE DEFECT STRUCTURE OF VITREOUS SIO2-FILMS ON SILICON .3. THE ROLE OF DEFECT STRUCTURE IN THE GROWTH OF SIO2-FILMS

被引：21

作者：

REVESZ, AG

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 58卷 / 01期

关键词：

D O I：

10.1002/pssa.2210580113

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：107 / 113

页数：7

相关论文

共 26 条

[1] HYDRIDES AND HYDROXYLS IN THIN SILICON DIOXIDE FILMS
BECKMANN, KH
HARRICK, NJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 614 - &
[2] THEORY OF THE OXIDATION OF METALS
CABRERA, N
MOTT, NF
[J]. REPORTS ON PROGRESS IN PHYSICS, 1948, 12 : 163 - 184
[3] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
DEAL, BE
GROVE, AS
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &
[4] KINETICS OF THERMAL-OXIDATION OF SILICON IN O2/H2O AND O2/CL2 MIXTURES
DEAL, BE
HESS, DW
PLUMMER, JD
HO, CP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (02) : 339 - 346
[5] FORMATION OF ULTRATHIN OXIDE-FILMS ON SILICON
FEHLNER, FP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (12) : 1723 - +
[6] HETHERINGTON G, 1964, PHYS CHEM GLASSES-B, V5, P147
[7] THERMAL OXIDATION OF SILICON - INSITU MEASUREMENT OF GROWTH-RATE USING ELLIPSOMETRY
HOPPER, MA
CLARKE, RA
YOUNG, L
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) : 1216 - 1222
[8] Silicon Oxidation Studies: The Role of H2O
Irene, E. A.
Ghez, R.
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (11) : 1757 - 1761
[9] EFFECTS OF TRACE AMOUNTS OF WATER ON THERMAL OXIDATION OF SILICON IN OXYGEN
IRENE, EA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) : 1613 - 1616
[10] JORGENSEN PJ, 1967, J ELECTROCHEM SOC, V112, P820