400-A HIGH ASPECT-RATIO LINES PRODUCED IN POLYMETHYL METHACRYLATE (PMMA) BY ION-BEAM EXPOSURE

被引:42
作者
KARAPIPERIS, L
LEE, CA
机构
[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
[2] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
关键词
D O I
10.1063/1.91137
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report preliminary results on the fabrication of 400- and 2600-Å deep lines in polymethyl methacrylate (PMMA) by means of H+ exposure through a holographically produced fine conformal gold mask.
引用
收藏
页码:395 / 397
页数:3
相关论文
共 13 条
[1]   250-A LINEWIDTHS WITH PMMA ELECTRON RESIST [J].
BROERS, AN ;
HARPER, JME ;
MOLZEN, WW .
APPLIED PHYSICS LETTERS, 1978, 33 (05) :392-394
[2]   SURFACE RELIEF STRUCTURES WITH LINEWIDTHS BELOW 2000A [J].
FLANDERS, DC ;
SMITH, HI ;
LEHMANN, HW ;
WIDMER, R ;
SHAVER, DC .
APPLIED PHYSICS LETTERS, 1978, 32 (02) :112-114
[3]  
GIBBONS JF, 1975, PROJECTED RANGE STAT
[4]  
KOMURO M, 1977, 24TH SPRING M JAP SO, P308
[5]  
LEVISETTI R, 1977, SCANNING ELECTRON 1, P125
[6]  
MELLIARSMITH CM, 1976, J VAC SCI TECHNOL, V13, P1011
[7]  
Northcliffe L. S., 1970, NUCL DATA A, V7, P233
[8]  
SIEGEL B, COMMUNICATION
[9]  
SMITH B, 1977, ION IMPLANTATION DAT
[10]  
SPILLER E, TOPICS APPLIED PHYSI