A HIGH-RESOLUTION MULTIBIT SIGMA-DELTA MODULATOR WITH INDIVIDUAL-LEVEL AVERAGING

被引：59
作者：
CHEN, F
LEUNG, BH
机构：
[1] VLSI Research Group, Electrical and Computer Engineering Department, University of Waterloo, Waterloo
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1995年 / 30卷 / 04期
关键词：
D O I：
10.1109/4.375966
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A second-order sigma-delta modulator with a 3-b internal quantizer employing the individual level averaging technique has been designed and implemented in a 1.2 mu m CMOS technology. Testing results show no observable harmonic distortion components above the noise floor. Peak SI(IV + D) ratio of 91 dB and dynamic range of 96 dB have been achieved at a dock rate of 2.56 MHz for a 20 KHz baseband, No tone is observed in the baseband as the amplitude of a 10 KHz input sine wave is reduced from -0.5 dB to -107 dB below the voltage reference. The active area of the prototype chip is 3.1 mm(2) and it dissipates 67.5 mW of power from a 5 V supply.
引用
收藏
页码：453 / 460
页数：8
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