INFLUENCE OF IONIZED IMPURITIES ON THE LINEWIDTH OF INTERSUBBAND TRANSITIONS IN GAAS/GAALAS QUANTUM-WELLS

被引：35
作者：
DUPONT, EB
DELACOURT, D
PAPILLON, D
SCHNELL, JP
PAPUCHON, M
机构：
[1] THOMSON-CSF, Laboratoire Central de Recherches, 91404 Orsay, Domaine de Corbeville
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 17期
关键词：
D O I：
10.1063/1.107082
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this letter, we report the influence of silicon donors on the linewidth of intersubband transitions 1-2 in GaAs/Ga0.75Al0.25As square quantum wells. We clearly demonstrate that the relative position between the ionized impurities and the center of the quantum wells is a major factor on the linewidth of the mid-infrared (10-mu-m) transitions. Besides, it is shown that the scattering processes are more influenced by temperature when donors are far from the quantum well (QW).
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页码：2121 / 2122
页数：2
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