GROWTH-KINETICS OF VICINAL SURFACES OF HE-4 CRYSTALS

被引：12
|
作者：
ANDREEVA, OA
KESHISHEV, KO
KOGAN, AB
MARCHENKOV, AN
机构：
来源：
EUROPHYSICS LETTERS | 1992年 / 19卷 / 08期
关键词：
PHYSICS OF CRYSTAL GROWTH; SOLID HELIUM AND RELATED QUANTUM CRYSTALS; SOLID-FLUID INTERFACE PROCESSES;
D O I：
10.1209/0295-5075/19/8/004
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The temperature dependence of the growth coefficient in the angular vicinity of the basal [0001] facet of hcp He-4 crystals has been measured in the temperature range from 0.35 K to 0.45 K. Contrary to theoretical predictions this dependence turned out to be much stronger for vicinal surfaces than for nonvicinal orientations. For vicinal surfaces experimental data can be approximated by both K is-proportional-to T-5 and K is-proportional-to exp [epsilon/T] dependences, where epsilon = 1.9 K.
引用
收藏
页码：683 / 686
页数：4
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