SIMULTANEOUS JUNCTION FORMATION USING A DIRECTED ENERGY LIGHT-SOURCE

被引：8

作者：

CAMPBELL, RB ^{[1
]}

MEIER, DL ^{[1
]}

机构：

[1] WESTINGHOUSE ELECT CORP,CTR RES & DEV,PITTSBURGH,PA 15235

来源：

关键词：

D O I：

10.1149/1.2108373

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2210 / 2211

页数：2

共 5 条

[1]

CAMPBELL RB, 1985, 18TH P IEEE PHOT SPE, P465

[2]

HOELZLEIN K, 1984, J APPL PHYS A, V34, P155

[3] RECOMBINATION PROPERTIES OF OXYGEN-PRECIPITATED SILICON [J].

HWANG, JM ;

SCHRODER, DK .

[4] RECOMBINATION LIFETIME IN OXYGEN-PRECIPITATED SILICON [J].

HWANG, JM ;

SCHRODER, DK ;

GOODMAN, AM .

[5] SILICON RIBBON GROWTH BY THE DENDRITIC WEB PROCESS [J].

SEIDENSTICKER, RG ;

HOPKINS, RH .