TWO-DIMENSIONAL SIMULATION OF SUBMICROMETER GAAS-MESFETS - SURFACE EFFECTS AND OPTIMIZATION OF RECESSED GATE STRUCTURES

被引：38

作者：

HELIODORE, F ^{[1
]}

LEFEBVRE, M ^{[1
]}

SALMER, G ^{[1
]}

ELSAYED, OL ^{[1
]}

机构：

[1] UNIV CAIRO,FAC ENGN,DEPT ELECTR & COMMUN,CAIRO,EGYPT

来源：

关键词：

D O I：

10.1109/16.3332

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：824 / 830

页数：7

共 21 条

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LADBROOKE, PH
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BLOTEKJAER, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (01) : 38 - +
[4] CAPPY A, 1985, 2ND GAAS SIM GROUP M
[5] CAPPY A, 1986, THESIS LILLE
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CAPPY, A
KASZYNSKI, A
CONSTANT, E
SALMER, G
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 784 - 790
[7] CHEN CL, 1982, IEEE T ELECTRON DEV, V29, P1522, DOI 10.1109/T-ED.1982.20909
[8] CONSTANT E, I PHYS C SERIES, V57, P141
[9] Dumas J. M., 1985, 23rd Annual Proceedings Reliability Physics 1985 (Cat. No. 85CH2113-9), P39, DOI 10.1109/IRPS.1985.362072
[10] ELGHAZALY S, 1984, INT PHYS C SERIES, V60, P127