ENHANCEMENT OF THERMAL-STABILITY IN IN0.53GA0.47AS/INP QUANTUM-WELLS

We demonstrate enhanced thermal stability in In0.53Ga0.47As/InP quantum wells, discussing their interdiffusion mechanism. We examine the growth-condition dependence of group-V atom interdiffusion coefficients using our previously reported formula [K. Mukai et al., J. Crystal Growth 115 (1991) 433]. Stability is enhanced by reducing the growth temperature and making the buffer layer thicker. Based on interdiffusion activation energies and coefficients, we infer that interdiffusion in the InP layer is related to vacancies and dislocations, while interdiffusion in the In0.53Ga0.47As layer is related to interstitial site propagation. We conclude that the thermal stability of our samples was enhanced by improved InP layer qualities.