REAL SPACE TRANSFER AND MODULATION OF ELECTRON-MOBILITY IN GAAS/ALGAAS DOUBLE QUANTUM-WELL STRUCTURES

被引：2

作者：

OKUNO, E

KONDO, J

SAWAKI, N

AKASAKI, I

机构：

[1] Nagoya University, Department of Electronics, Chikusa-ku, Nagoya

来源：

SURFACE SCIENCE | 1992年 / 267卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(92)91202-M

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The electronic properties of a GaAs/AlGaAs double quantum well field-effect transistor (DQWFET) are studied at 77 and 4.2 K. The channel of the DQWFET consists of two quantum wells with different widths. The channel conductance as a function of the gate voltage indicates the switching of the conductive channel from one quantum well to the other, and the average electron mobility is modulated. In order to confirm the phenomena, photoluminescence (PL) spectra are examined as a function of the gate voltage, which shows a specific variation associated with the anti-crossing of the two quantized levels in the DQW structure.

引用

页码：570 / 573

页数：4

共 7 条

[1]

DINGLE R, 1987, SEMICONDUCTOR SEMIME, V24, pCH4

[2]

KITILYALLI IC, 1987, JPN J APPL PHYS, V26, P1519

[3] ELECTRON-TRANSFER BETWEEN ADJACENT CHANNELS SIMULATED BY ENSEMBLE MONTE-CARLO METHODS [J].