EFFECT OF CO ON THE LOW-TEMPERATURE DIFFUSION OF CR AND SI THROUGH THIN GOLD-FILMS

被引：33

作者：

CHANG, CA

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 06期

关键词：

D O I：

10.1149/1.2129894

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1331 / 1334

页数：4

共 17 条

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[6] LOW-TEMPERATURE MIGRATION OF SILICON THROUGH METAL FILMS IMPORTANCE OF SILICON-METAL INTERFACE [J].

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[7] FORMATION OF SILICON OXIDE OVER GOLD LAYERS ON SILICON SUBSTRATES [J].

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[8] EFFECT OF SURFACE CONDITION ON DIFFUSION IN THIN-FILMS AT LOW-TEMPERATURES [J].

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[10]

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