PECULIARITIES IN THE MODELING OF HIGH-DOSE IMPLANTATION OF NITROGEN ON SILICON TARGETS

被引：1

作者：

SOBESLAVSKY, E

SKORUPA, W

机构：

[1] Zentralinstitut Für Kernforschung, Akademie Der Wissenschaften Der Ddr, Rossendorf

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 122卷 / 01期

关键词：

D O I：

10.1002/pssa.2211220146

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：K19 / K24

页数：6

共 9 条

[1]

ARMINI AJ, COMMUNICATION

[2]

BUBERT H, 1985, MICROCHIMICA ACTA, V11, P49

[3]

BURENKOV AF, 1985, PROSTRANSTVENNYE RAS

[4]

HENSEL E, 1985, THESIS ADW DDR

[5]

JAEGER HU, 1985, THIN SOLID FILMS, V123, P159

[6] SURFACE SILICON CRYSTALLINITY AND ANOMALOUS COMPOSITION PROFILES OF BURIED SIO2 AND SI3N4 LAYERS FABRICATED BY OXYGEN AND NITROGEN IMPLANTATION IN SILICON [J].

MAEYAMA, S ;

KAJIYAMA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (05) :744-751

[7] MODELING OF NITROGEN HIGH-DOSE IMPLANTATION INTO SILICON IN THE ENERGY-RANGE OF 150 TO 330 KEV [J].

SOBESLAVSKY, E ;

SKORUPA, W .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 114 (01) :135-144

[8] NITROGEN PROFILE MODIFICATION IN HIGH-DOSE IMPLANTATION SYNTHESIS OF SILICON-NITRIDE [J].

SOBESLAVSKY, E ;

JAGER, HU ;

KREISSIG, U ;

SKORUPA, W ;

WOLLSCHLAGER, K .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 105 (02) :387-396

[9]

VAUHELLEMONT J, 1990, 4 P INT S SIL INS TE, V90, P187

← 1 →