ANGLE-RESOLVED-PHOTOEMISSION STUDY OF THE ELECTRONIC-STRUCTURE OF THE SI(001)C(4X2) SURFACE

被引：99
作者：
ENTA, Y
SUZUKI, S
KONO, S
机构：
[1] Department of Physics, Faculty of Science, Tohoku University
来源：
PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 21期
关键词：
D O I：
10.1103/PhysRevLett.65.2704
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A wide-terrace single-domain Si(001)c(4×2) surface has been obtained by cooling a wide-terrace single-domain Si(001)2×1 surface to 20080 K. Angle-resolved ultraviolet photoelectron spectra have been measured for the Si(001)c(4×2) surface at 200100 K and compared with those for the Si(001)2×1 surface. The electronic structure of the Si(001)c(4×2) surface appears to be explained as that expected for antiferromagnetic order of asymmetric dimers of surface Si. The electronic structure of the Si(001)2×1 surface appears to be reminiscent of the c(4×2) surface. © 1990 The American Physical Society.
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页码：2704 / 2707
页数：4
相关论文
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