TUNNELING RESONANCE STUDIES OF ELECTRONIC MINISTOP GAP MODE IN COUPLED SEMI-INFINITE SEMICONDUCTOR SUPERLATTICES

被引：10
作者：
HUANG, FY
机构：
[1] School of Electrical Engineering, University of Bath
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 21期
关键词：
D O I：
10.1063/1.103911
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A numerical technique is developed to analyze the electronic state in coupled semi-infinite semiconductor superlattices. It is found that the superlattice miniband shrinks to discrete energy levels near the surface, and localized electronic surface states with energy falling within the ministop gap exist under certain conditions. Numerical calculations are also compared with results from an exact eigenvalue equation.
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页码：2199 / 2201
页数：3
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