GROWTH OF HGCDTE EPILAYERS WITH ANY PREDESIGNED COMPOSITIONAL PROFILE BY LASER MOLECULAR-BEAM EPITAXY

被引：31
作者：
CHEUNG, JT
MADDEN, J
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 03期
关键词：
D O I：
10.1116/1.583811
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：705 / 708
页数：4
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