SILICON OXYNITRIDE STUDY BY THE TETRAHEDRON MODEL AND BY SPECTROSCOPIC ELLIPSOMETRY

被引：10
|
作者：
SASSELLA, A
LUCARNO, P
BORGHESI, A
CORNI, F
ROJAS, S
ZANOTTI, L
机构：
[1] UNIV MODENA,DIPARTIMENTO FIS,I-41100 MODENA,ITALY
[2] SGS THOMSON MICROELECTR,I-20041 AGRATE BRIANZA,ITALY
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1995年 / 187卷
关键词：
D O I：
10.1016/0022-3093(95)00170-0
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Silicon oxynitride samples deposited by plasma-enhanced chemical vapour deposition are characterized by different techniques to obtain their stoichiometry and density. From these data and applying the tetrahedron model, the optical functions in the range from 0.23 to 0.90 mu m are calculated and compared with the results of spectroscopic ellipsometry.
引用
收藏
页码：395 / 402
页数：8
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