NEUTRON DAMAGE IN GAAS LASER-DIODES - AT AND ABOVE LASER THRESHOLD

被引：13
作者：
BARNES, CE [1 ]
机构：
[1] SANDIA LABS,ALBUQUERQUE,NM 87115
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1972年 / NS19卷 / 06期
关键词：
D O I：
10.1109/TNS.1972.4326862
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：382 / 385
页数：4
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