ANALYSIS OF DIELECTRIC NITRIDE THIN-FILMS BY NRA,RBS AND X-RAY-DIFFRACTION

被引：2
作者：
STEDILE, FC
BAUMVOL, IJR
SCHREINER, WH
FREIRE, FL
机构：
[1] PONTIFICIA UNIV CATOLICA RIO DE JANEIRO,DEPT FIS,BR-22452 RIO JANEIRO,BRAZIL
[2] UNIV FED RIO GRANDE SUL,INST FIS,BR-91500 PORTO ALEGRE,RS,BRAZIL
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 79卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(93)95399-P
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Silicon nitride and aluminum nitride thin films were deposited by rf and dc magnetron reactive sputtering, respectively. By varying the deposition parameters we obtained films with different characteristics. The analyses of the films were performed using Rutherford backscattering spectrometry, nuclear reaction analysis (mainly the (d, p) and (p, gamma) nuclear reactions) and X-ray diffraction. From these analytical techniques we obtained the thickness, the stoichiometric ratios N/Si and N/Al of the films, the N and Al depth profiles, the contamination levels of 0 and C as well as an idea of the crystalline structure of the films. Several correlations among deposition parameters and film characteristics were found.
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页码：501 / 505
页数：5
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