DIRECT MEASUREMENT OF IMPURITY DISTRIBUTION IN SEMICONDUCTING MATERIALS

被引:5
作者
GUPTA, DC
CHAN, JY
机构
关键词
D O I
10.1063/1.1661149
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:515 / &
相关论文
共 50 条
[1]   ON THE TECHNIQUE OF OPTICAL GAIN MEASUREMENT IN SEMICONDUCTING MATERIALS [J].
ZVEREV, AG ;
NABIEV, RF ;
PECHENOV, AN ;
POPOV, YM ;
SKORBUN, SD .
KVANTOVAYA ELEKTRONIKA, 1980, 7 (09) :2011-2014
[2]   MEASUREMENT OF HEAT-CAPACITY OF SEMICONDUCTING MATERIALS BY DIRECT HEATING PULSE METHOD AT HIGH-TEMPERATURES [J].
NAITO, K ;
INABA, H ;
ISHIDA, M ;
SETA, K .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1979, 12 (08) :712-718
[3]   MEASUREMENT OF IMPURITY DISTRIBUTION IN DIFFUSED LAYERS IN GERMANIUM [J].
SCHLEGEL, ES ;
SANDERS, DP .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (09) :1987-&
[4]   IMPURITY STATES IN SEMICONDUCTING MASERS [J].
ZEIGER, HJ .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) :1657-&
[5]   Direct measurement of Vth fluctuation caused by impurity positioning [J].
Tanaka, T ;
Usuki, T ;
Momiyama, Y ;
Sugii, T .
2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2000, :136-137
[6]   Direct measurement of the impurity dynamics during an ELM cycle [J].
Wade, MR ;
Burrell, KH ;
Hogan, JT ;
Leonard, AW ;
Osborne, TH ;
Snyder, P ;
Coster, D .
JOURNAL OF NUCLEAR MATERIALS, 2005, 337 (1-3) :737-741
[7]   INVESTIGATION OF CHARGE STATE OF IMPURITY ATOMS IN SEMICONDUCTING MATERIALS BY POSITRON-ANNIHILATION METHOD [J].
AREFEV, KP ;
VOROBEV, SA ;
GRISHIN, AN ;
KLIMOV, VN ;
SHAPOSHNIKOV, AT ;
ETIN, GI ;
TSOI, AA .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (08) :935-937
[8]   Novel measurement method of ion impurity in OPV materials [J].
Inoue, Masaru ;
Oyabu, Noriaki ;
Kumoda, Yo ;
Suenaga, Yu ;
Ishii, Tomoya ;
Naito, Hiroyoshi .
2019 TWENTY-SIXTH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD): TFT TECHNOLOGIES AND FPD MATERIALS, 2019,
[9]   THE DIRECT MEASUREMENT OF DRUG DISTRIBUTION [J].
JONES, ME ;
RUNCIMAN, WB ;
ILSLEY, AH ;
MATHER, LE ;
UPTON, RN ;
CARAPETIS, R .
CLINICAL AND EXPERIMENTAL PHARMACOLOGY AND PHYSIOLOGY, 1983, 10 (02) :186-186
[10]   Distortion of profiles of impurity distribution during SIMS measurement [J].
Taganrog Radiotechnical University, Taganrog, Russia .
Surface Investigation X-Ray, Synchrotron and Neutron Techniques, 2001, 16 (03) :521-526