MASS-SPECTROMETRIC STUDY OF THE REACTION OF TRIMETHYLGALLIUM AND GAAS

被引：9

作者：

OHKI, Y

HIRATANI, Y

机构：

[1] Optoelectronics Technology Research Laboratory, Tsukuba, Ibaraki, 300-26

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 105卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90341-H

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The decomposition reaction of trimethylgallium (TMG) with a GaAs (100) surface under ultra-high vacuum was studied by mass-spectrometry and reflection high-energy electron diffraction (RHEED). The reaction depends on the substrate temperature: below 300°C, the reaction does not occur effectively; between 400 and 500°C, one monolayer adsorption of Ga-containing species is suggested. Above 500°C, the reaction occurs in two stages. The reaction rate of TMG on As-stabilized surface is faster than that on Ga-stabilized surface. The deposition of multilayers of Ga is also indicated above 500°C. © 1990.

引用

页码：77 / 80

页数：4

共 6 条

[1] GALLIUM-INDUCED AND ARSENIC-INDUCED OSCILLATIONS OF INTENSITY OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION IN THE GROWTH OF (001) GAAS BY CHEMICAL BEAM EPITAXY [J].