DOPING AND P-N-JUNCTION FORMATION IN INAS1-XSBX/INSB SLSS BY MOCVD

被引：21
作者：
BIEFELD, RM
KURTZ, SR
FRITZ, IJ
机构：
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1989年 / 18卷 / 06期
关键词：
D O I：
10.1007/BF02657532
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：775 / 780
页数：6
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