OBSERVATION OF STRONG ORDERING IN GAXIN1-XP ALLOY SEMICONDUCTORS

被引：494

作者：

GOMYO, A ^{[1
]}

SUZUKI, T ^{[1
]}

IIJIMA, S ^{[1
]}

机构：

[1] NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN

来源：

PHYSICAL REVIEW LETTERS | 1988年 / 60卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.60.2645

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2645 / 2648

页数：4

共 14 条

[1] GAXIN1-XP LIQUID-PHASE EPITAXIAL-GROWTH ON (100) GAAS SUBSTRATES [J].

ASAI, H ;

OE, K .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6849-6851

[2] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE [J].

GOMYO, A ;

KOBAYASHI, K ;

KAWATA, S ;

HINO, I ;

SUZUKI, T ;

YUASA, T .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :367-373

[3] EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY [J].

GOMYO, A ;

SUZUKI, T ;

KOBAYASHI, K ;

KAWATA, S ;

HINO, I ;

YUASA, T .

APPLIED PHYSICS LETTERS, 1987, 50 (11) :673-675

[4] ORDERING IN GAAS1-XSBX GROWN BY MOLECULAR-BEAM EPITAXY [J].

IHM, YE ;

OTSUKA, N ;

KLEM, J ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1987, 51 (24) :2013-2015

[5] ORDERED STRUCTURES IN GAAS0.5SB0.5 ALLOYS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

JEN, HR ;

CHERNG, MJ ;

STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1986, 48 (23) :1603-1605

[6] LONG-RANGE ORDER IN ALXGA1-XAS [J].

KUAN, TS ;

KUECH, TF ;

WANG, WI ;

WILKIE, EL .

PHYSICAL REVIEW LETTERS, 1985, 54 (03) :201-204

[7] LONG-RANGE ORDER IN XGA1-XAS [J].

KUAN, TS ;

WANG, WI ;

WILKIE, EL .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :51-53

[8] 1ST-PRINCIPLES CALCULATION OF SEMICONDUCTOR-ALLOY PHASE-DIAGRAMS [J].

MBAYE, AA ;

FERREIRA, LG ;

ZUNGER, A .

PHYSICAL REVIEW LETTERS, 1987, 58 (01) :49-52

[9]

Nakayama H., 1986, I PHYS C SER, V79, P289

[10]

OBA Y, 1986, J CRYST GROWTH, V77, P374

← 1 2 →