DEPTH PROFILING OF SHALLOW ARSENIC IMPLANTS IN SILICON USING SIMS

[1] DEPTH RESOLUTION OF SPUTTER PROFILING [J]. APPLIED PHYSICS, 1979, 18 (02): : 131 - 140

[2] PROFILE DISTORTION IN SIMS [J]. SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 1984, 39 (12) : 1567 - 1571

[3] EVALUATION OF SECONDARY ION MASS-SPECTROMETRY PROFILE DISTORTIONS USING RUTHERFORD BACKSCATTERING [J]. APPLIED PHYSICS LETTERS, 1981, 39 (12) : 997 - 999

[4] DOWSETT MG, 1986, SPRINGER SERIES CHEM, V44, P282

[5] RECOIL MIXING IN SOLIDS BY ENERGETIC ION-BEAMS [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 329 - 342

[6] THE INFLUENCE OF BOMBARDMENT CONDITIONS UPON THE SPUTTERING AND SECONDARY ION YIELDS OF SILICON [J]. APPLIED SURFACE SCIENCE, 1981, 7 (04) : 372 - 392

[7] NAKATA J, 1982, JAP J APPL PHYS, V21, P136

[8] AN AES-SIMS STUDY OF SILICON OXIDATION INDUCED BY ION OR ELECTRON-BOMBARDMENT [J]. APPLICATIONS OF SURFACE SCIENCE, 1980, 5 (03): : 221 - 242

[9] NANOMETER STRUCTURES IN SEMICONDUCTORS FORMED BY LOW-ENERGY ION-IMPLANTATION [J]. VACUUM, 1984, 34 (1-2) : 193 - 197

[10] SHIMIZU R, 1977, 7TH P INT VAC C 3RD, V2, P1417

[1] DEPTH RESOLUTION OF SPUTTER PROFILING [J]. APPLIED PHYSICS, 1979, 18 (02): : 131 - 140

[2] PROFILE DISTORTION IN SIMS [J]. SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 1984, 39 (12) : 1567 - 1571

[3] EVALUATION OF SECONDARY ION MASS-SPECTROMETRY PROFILE DISTORTIONS USING RUTHERFORD BACKSCATTERING [J]. APPLIED PHYSICS LETTERS, 1981, 39 (12) : 997 - 999

[4] DOWSETT MG, 1986, SPRINGER SERIES CHEM, V44, P282

[5] RECOIL MIXING IN SOLIDS BY ENERGETIC ION-BEAMS [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 329 - 342

[6] THE INFLUENCE OF BOMBARDMENT CONDITIONS UPON THE SPUTTERING AND SECONDARY ION YIELDS OF SILICON [J]. APPLIED SURFACE SCIENCE, 1981, 7 (04) : 372 - 392

[7] NAKATA J, 1982, JAP J APPL PHYS, V21, P136

[8] AN AES-SIMS STUDY OF SILICON OXIDATION INDUCED BY ION OR ELECTRON-BOMBARDMENT [J]. APPLICATIONS OF SURFACE SCIENCE, 1980, 5 (03): : 221 - 242

[9] NANOMETER STRUCTURES IN SEMICONDUCTORS FORMED BY LOW-ENERGY ION-IMPLANTATION [J]. VACUUM, 1984, 34 (1-2) : 193 - 197

[10] SHIMIZU R, 1977, 7TH P INT VAC C 3RD, V2, P1417