DEPTH PROFILING OF SHALLOW ARSENIC IMPLANTS IN SILICON USING SIMS

被引：37
作者：
CLEGG, JB
机构：
来源：
SURFACE AND INTERFACE ANALYSIS | 1987年 / 10卷 / 07期
关键词：
D O I：
10.1002/sia.740100704
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
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页码：332 / 337
页数：6
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