FIELD-EFFECT TRANSISTORS WITH AN AU/PD/TI-INP SCHOTTKY-BARRIER

被引：0
|
作者：
RADAUTSAN, SI
KOBZARENKO, VN
NOZDRINA, KG
RUSSU, EV
LAPIN, VG
KOKHANYUK, MB
机构：
来源：
SOVIET MICROELECTRONICS | 1988年 / 17卷 / 06期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：292 / 294
页数：3
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