FIELD-EFFECT TRANSISTORS WITH AN AU/PD/TI-INP SCHOTTKY-BARRIER

被引：0

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作者：

RADAUTSAN, SI

KOBZARENKO, VN

NOZDRINA, KG

RUSSU, EV

LAPIN, VG

KOKHANYUK, MB

机构：

来源：

SOVIET MICROELECTRONICS | 1988年 / 17卷 / 06期

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中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

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页码：292 / 294

页数：3

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