ON THE TEMPERATURE-DEPENDENCE OF POLYSILICON EMITTER TRANSISTORS

被引：0
作者：
DOYLE, DJ
LANE, WA
机构：
[1] National Microelectronics Research Centre, University College, Cork
来源：
MICROELECTRONIC ENGINEERING | 1991年 / 15卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(91)90277-K
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper investigates the beta-f temperature behaviour of polysilicon emitter transistors, with a view to understanding the device physics. Realigned polysilicon emitters are shown to behave as ideal single crystal transistors. Transistors with true polysilicon emitters exhibit a reduced temperature sensitivity of beta-f. This is thought to result from a potential barrier at the interface. This potential barrier is dependent on the polysilicon doping level.
引用
收藏
页码：529 / 532
页数：4
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