ON THE TEMPERATURE-DEPENDENCE OF POLYSILICON EMITTER TRANSISTORS

被引：0

作者：

DOYLE, DJ

LANE, WA

机构：

[1] National Microelectronics Research Centre, University College, Cork

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 15卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90277-K

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper investigates the beta-f temperature behaviour of polysilicon emitter transistors, with a view to understanding the device physics. Realigned polysilicon emitters are shown to behave as ideal single crystal transistors. Transistors with true polysilicon emitters exhibit a reduced temperature sensitivity of beta-f. This is thought to result from a potential barrier at the interface. This potential barrier is dependent on the polysilicon doping level.

引用

页码：529 / 532

页数：4

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