ON THE TEMPERATURE-DEPENDENCE OF POLYSILICON EMITTER TRANSISTORS

This paper investigates the beta-f temperature behaviour of polysilicon emitter transistors, with a view to understanding the device physics. Realigned polysilicon emitters are shown to behave as ideal single crystal transistors. Transistors with true polysilicon emitters exhibit a reduced temperature sensitivity of beta-f. This is thought to result from a potential barrier at the interface. This potential barrier is dependent on the polysilicon doping level.