EFFECT OF REDUCED TEMPERATURE ON THE FT OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：2

作者：

LASKAR, J

HANSON, AW

CUNNINGHAM, BT

KOLODZEY, J

STILLMAN, G

PRASAD, SJ

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

[3] TEKTRONIX INC,TEKTRONIX LABS,SOLID STATE RES LAB,BEAVERTON,OR 97077

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 06期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.82077

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The high-frequency and dc performance of single-heterojunction Al0.25Ga0.75As/GaAs HBT's have been measured at temperatures between 300 and 110 K. We have found that the maximum unity-current-gain cutoff frequency f(T) increases from 26 GHz at 300 K to 34 GHz at 110 K. The results at 110 K are not adequately described by the simple estimate for base transit time, tau-B = W(B)2/2D(n), at least until corrections for degeneracy and minority-carrier mobility enhancement are included. Reasonable agreement can also be obtained assuming that base transport is limited by the thermal velocity of electrons at reduced temperatures.

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收藏

页码：329 / 331

页数：3

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