LUMINESCENCE AND TRANSPORT-PROPERTIES OF HIGH-QUALITY INP GROWN BY CBE BETWEEN 450-DEGREES-C AND 550-DEGREES-C

被引：24

作者：

RUDRA, A

CARLIN, JF

PROCTOR, M

ILEGEMS, M

机构：

[1] Institute for Micro- and Optoelectronics, Ecole Polytechnique Fédérale de Lausanne

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)91045-C

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A Hall mobility as high as 153,800 cm2 V-1 s-1 at 77 K with N(d) - N(a) = 1.5 x 10(14) cm-3 has been obtained by adjusting the growth temperature and the phosphine cracking temperature. The 4 K photoluminescence spectra show finely resolved excitonic transitions for layers grown above 535-degrees-C with linewidths as narrow as 0.07 meV. The use of substrates misoriented 2-degrees and 3.5-degrees towards (111)A significantly improves the morphology at the cost of a slight increase in the impurity incorporation.

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页码：589 / 593

页数：5

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