THE HYDROGENATED AMORPHOUS-SILICON REACH-THROUGH AVALANCHE PHOTODIODES (A-SI-H RAPDS)

被引:13
作者
HONG, JW
CHEN, YW
LAIH, WL
FANG, YK
CHANG, CY
GONG, C
机构
[1] NATL CHENG KUNG UNIV,SEMICOND & SYST LABS,TAINAN,TAIWAN
[2] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN
[3] NATL TSING HUA UNIV,DEPT ELECT ENGN,HSINCHU 300,TAIWAN
关键词
D O I
10.1109/3.44959
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The RAPD structure is adopted to improve the electrical and optical performance of the photosensing device made of a-Si: H. Both the electron-injection n+−i−δp−i−p+ and hole-injection p+−i−δn− i−n+ a−Si: H RAPD’s are fabricated on the ITO-coated glass substrates by plasma enhanced chemical vapor deposition (PECVD) system. The photocurrent multiplication method is employed to study the multiplication factors and the impact ionization coefficients of the a-Si:H RAPD’s. Since the electron-injection models have better performance, the relationships between the device dimensions and characteristics, such as I- V curves, optical gains, impact ionization rates, and excess noise factors are further studied and presented. An optical gain of 380 can be obtained under a 5 μW He-Ne laser input light power and at a reverse-bias voltage of 14.5 V. The excess noise factor is 6.47 at a multiplication of 33.46. The dynamic rise time of 1 μs has been observed under a 1.8 kΩ load resistance. The hole and electron impact ionization rates (β and α) can be expressed empirically by β(E) = 9.87 × 104 exp (−1.36 × 106/E) cm−1 and α(E) = 6.34 × 105 exp (−3.16 × 105/E) cm−1 for electric field E ranging from 5 × 105 to 3.5 × 106 V/cm, respectively. Based on the results of this paper, the a-Si:H RAPD would be a promising a-Si: H device for the photosensing applications. © 1990 IEEE
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页码:280 / 284
页数:5
相关论文
共 17 条
[1]   AMORPHOUS-SILICON BULK BARRIER PHOTOTRANSISTOR WITH SCHOTTKY-BARRIER EMITTER [J].
CHANG, CY ;
WU, BS ;
FANG, YK ;
LEE, RH .
APPLIED PHYSICS LETTERS, 1985, 47 (01) :49-51
[2]   OPTICAL AND ELECTRICAL-CURRENT GAIN IN AN AMORPHOUS-SILICON BULK BARRIER PHOTOTRANSISTOR [J].
CHANG, CY ;
WU, BS ;
FANG, YK ;
LEE, RH .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (03) :149-150
[4]  
CHANG CY, 1985, P INT ELECTRON DEVIC, P432
[5]  
CHANG CY, 1986 P INT C SOL STA, P695
[6]  
CHANG CY, 1986, P INT ELECTRON DEVIC, P200
[7]   MODULATED BARRIER PHOTO-DIODE - A NEW MAJORITY-CARRIER PHOTODETECTOR [J].
CHEN, CY ;
CHO, AY ;
GARBINSKI, PA ;
BETHEA, CG ;
LEVINE, BF .
APPLIED PHYSICS LETTERS, 1981, 39 (04) :340-342
[8]   AMORPHOUS-SILICON SILICON-CARBIDE SUPERLATTICE AVALANCHE PHOTODIODES [J].
JWO, SC ;
WU, MT ;
FANG, YK ;
CHEN, YW ;
HONG, JW ;
CHANG, CY .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (08) :1279-1288
[9]   MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J].
MCINTYRE, RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :164-+
[10]  
MOLL JL, 1964, PHYSICS SEMICONDUCTO, P227