PHOTOINJECTION INTO SIO2 - ELECTRON SCATTERING IN IMAGE FORCE POTENTIAL WELL

被引：175
作者：
BERGLUND, CN
POWELL, RJ
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 02期
关键词：
D O I：
10.1063/1.1660066
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：573 / +
页数：1
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共 24 条
[1]   ELECTRON CORRELATION AND SCREENING EFFECTS - IN RELATION TO SURFACE PHYSICS [J].
BARDEEN, J .
SURFACE SCIENCE, 1964, 2 :381-388
[2]  
BERGLUND CN, 1964, PHYS REV A-GEN PHYS, V136, P1030
[3]   BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES [J].
DEAL, BE ;
SNOW, EH ;
MEAD, CA .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) :1873-&
[4]   The analysis of photoelectric sensitivity curves for clean metals at various temperatures [J].
Fowler, RH .
PHYSICAL REVIEW, 1931, 38 (01) :45-56
[5]   PHOTOEMISSION OF ELECTRONS FROM METALS INTO SILICON DIOXIDE [J].
GOODMAN, AM ;
ONEILL, JJ .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) :3580-&
[6]   PHOTOEMISSION OF ELECTRONS FROM N-TYPE DEGENERATE SILICON INTO SILICON DIOXIDE [J].
GOODMAN, AM .
PHYSICAL REVIEW, 1966, 152 (02) :785-+
[7]   ELECTRON HALL EFFECT IN SILICON DIOXIDE [J].
GOODMAN, AM .
PHYSICAL REVIEW, 1967, 164 (03) :1145-&
[8]   PHOTOEMISSION OF ELECTRONS FROM SILICON AND GOLD INTO SILICON DIOXIDE [J].
GOODMAN, AM .
PHYSICAL REVIEW, 1966, 144 (02) :588-&
[9]   PHOTOEMISSION OF HOLES FROM SILICON INTO SILICON DIOXIDE [J].
GOODMAN, AM .
PHYSICAL REVIEW, 1966, 152 (02) :780-&
[10]   SIMPLE MODEL FOR COLLISION EFFECTS IN PHOTOEMISSION [J].
KANE, EO .
PHYSICAL REVIEW, 1966, 147 (01) :335-&
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